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C2881 Datasheet | Specifications & PDF Download

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C2881 2SC2881

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT.

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2SC2881 - NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS  FEATURES * High voltag
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2SC2881 - NPN Silicon Transistor

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High voltage:VCEO=120V  High transition frequency;fT=120MHz.  PC=500mW
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C2881 - 2SC2881

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • H
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2SC2881 - Transistors

SOT-89 Plastic-Encapsulate Transistors WILLAS 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z P
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HOTTECH

2SC2881 - NPN Transistor

Plastic-Encapsulate Transistors FEATURES • High voltage:VCEO=120V • High transition frequency;fT=120MHz. • PC=500mW. • Complements the 2SA1201. Maxi
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2SC2881 - Transistor

SMD Type Voltage Amplifier Applications 2SC2881 Transistors Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small
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