2SC2881 Silicon NPN TRANSISTOR

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm

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Datasheet Specifications

Part number: 2SC2881
Manufacturer: Toshiba ↗ Semiconductor
File Size: 140.52 KB
Datasheet: 2SC2881_ToshibaSemiconductor.pdf
Description: Silicon NPN TRANSISTOR

Applications

* Power Amplifier Applications 2SC2881 Unit: mm
* High voltage: VCEO = 120 V
* High transition frequency: fT = 120 MHz (typ. )
* Small flat package
* PC = 1.0 to 2.0 W (mounted on ceramic substrate)
* Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°

2SC2881 Distributors

📁 Related Datasheet

2SC2881-O 2SC2881-Y 2SC2881A 2SC2883-O 2SC2883-Y 2SC2885

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2SC2881 Silicon NPN TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC2881-like datasheet