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2SC2881 - Silicon NPN TRANSISTOR

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Part number 2SC2881
Manufacturer Toshiba Semiconductor
File Size 140.52 KB
Description Silicon NPN TRANSISTOR
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 120 120 5 800 160 500 1000 150 −55 to 150 V V V mA mA mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.
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