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2SC2881 Datasheet - Toshiba Semiconductor

2SC2881 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-b.

2SC2881 Datasheet (140.52 KB)

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Datasheet Details

Part number:

2SC2881

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

140.52 KB

Description:

Silicon npn transistor.

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2SC2881 Silicon NPN TRANSISTOR Toshiba Semiconductor

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