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C2881 2SC2881

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm

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Applications

* Power Amplifier Applications 2SC2881 Unit: mm
* High voltage: VCEO = 120 V
* High transition frequency: fT = 120 MHz (typ. )
* Small flat package
* PC = 1.0 to 2.0 W (mounted on ceramic substrate)
* Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°

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📁 Related Datasheet

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2SC2881 Toshiba
Toshiba C2881-like datasheet