C2880 Datasheet - Toshiba

C2880 2SC2880

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications Unit: mm High voltage: VCEO = 150 V High transition frequency: fT = 120 MHz Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector.

C2880 Features

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C2880-Toshiba.pdf