C3710 Datasheet | Specifications & PDF Download

MIC37100/37101/37102 1A Low-Voltage µCap LDO General Description Features The MIC37100, MIC37101, and MIC37102 are 1A lowdropout, linear voltage re

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MIC37100/37101/37102 1A Low-Voltage µCap LDO General Description Features The MIC37100, MIC37101, and MIC37102 are 1A lowdropout, linear voltage re

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3710 DESCRIPTION ·With TO-220Fa package ·Complem

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC3710 DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1452 ·L

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A 2SC3710A High-Power Switching Applications Unit: mm • Low collector saturatio

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MIC37100/37101/37102 1A Low-Voltage µCap LDO General Description Features The MIC37100, MIC37101, and MIC37102 are 1A lowdropout, linear voltage re

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Ty

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UC1710 UC2710 UC3710 High Current FET Driver FEATURES • Totem Pole Output with 6A Source/Sink Drive • 3ns Delay • 20ns Rise and Fall Time into 2.2nF

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching S

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 60V RDS(on) (max) 1 IDSS (min) 600mA Package SOT-89 Features • Depletion Mode Device Offers Low

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www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm • • •

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 60V RDS(on) (max) 1 IDSS (min) 600mA Package SOT-89 Features • Depletion Mode Device Offers Low

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250VP RDS(on) (max) 10 IDSS (min) 220mA Package SOT-89 Features • Low RDS(on) at Cold Temperatu

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Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B TTC3710B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter satu

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type TTA1452B ·Minimum Lo

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