C496 Datasheet | Specifications & PDF Download

: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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Ordering number : EN1536B CMOS LSI LC4966 Quad Bilateral Switch Overview The LC4966 is an IC that provides the same functions as the MLC4066B and t

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Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Swit

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Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 s Features q q q s Absolute Maxi

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2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Cap

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05109 PLC496 ULTRA LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ Sensor & Control Circuits ✔ FireWire ✔ Ethernet - 10/100/1000 Base T ✔ Handheld Electroni

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Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2)

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VT82C496G VT82C406MV GREEN PC 80486 PCI/VL/ISA SYSTEM DATA SHEET DATE : April 20, 1995 VIA TECHNOLOGIES, INC. VIA Technologies, Inc. Table of Conten

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION ·With TO-3PFM package ·High br

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4963 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built in damper diode ·10

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40V N-Channel MOSFETs PDC4960X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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40V N-Channel MOSFETs PDC4964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Preliminary datasheet 40V N-Channel MOSFETs PDC4964Z General Description These N-Channel enhancement mode power field effect transistors are using

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MSC4963W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @

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