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PDC4960X Datasheet - Potens semiconductor

PDC4960X N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC4960X Features

* 40V, 100A, RDS(ON) =2.8mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ

PDC4960X-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDC4960X

Manufacturer:

Potens semiconductor

File Size:

604.13 KB

Description:

N-channel mosfets.

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PDC4960X PDC4960X N-Channel MOSFETs Potens semiconductor

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