C5242 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO =

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isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to

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2STC5242 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO = 230 V Complementary

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type KTA

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TC524256BJ-10-EL IL08 C-MOS 1M (262,144 WORD x 4)-BIT MULTIPORT DRAM —TOP VIEW— INPUT A0 - A8 SC IN 1 SIO1 I/O 2 SIO2 I/O 3 GND 28 27 SIO4 I/O 26 S

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO =

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5242 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Comple

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SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. A KTC5242A TRIPLE DIFFUSED NPN TRANSISTOR www.DataSheet4U.com Q B K FEATURES High Colle

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2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High

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KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V (Min.) High Power Dissi

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KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V (Min.) High Power Dissi

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SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. FEATURES ᴌHigh Collector Voltage : VCEO=230V(Min.) ᴌComplementary to KTA1962. ᴌRecommended

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