TOSHIBA Transistor Silicon NPN Triple Diffused Typ.
TC524258B - Silicon Gate CMOS Multiport DRAM
w www.DataSheet4U.com w .D w t a S a e h U 4 t e .c m o .C5242 - 2SC5242
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO =.KTC5242A - NPN Transistor
SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. A KTC5242A TRIPLE DIFFUSED NPN TRANSISTOR www.DataSheet4U.com Q B K FEATURES High Colle.KTC5242 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type KTA.KTC5242 - TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. FEATURES ᴌHigh Collector Voltage : VCEO=230V(Min.) ᴌComplementary to KTA1962. ᴌRecommended .TC524257 - MOS Memory
w www.DataSheet4U.com w w .D t a S a e h t e U 4 .c m o .2SC5242 - Silicon NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO =.TC524256BJ-10-EL - CMOS 1M-Bit Multiport DRAM
TC524256BJ-10-EL IL08 C-MOS 1M (262,144 WORD x 4)-BIT MULTIPORT DRAM —TOP VIEW— INPUT A0 - A8 SC IN 1 SIO1 I/O 2 SIO2 I/O 3 GND 28 27 SIO4 I/O 26 S.TC524256B - 262144 x 4-Bit Multiport DRAM
w www.DataSheet4U.com w w .D t a S a e h t e U 4 .c m o .TC524259B - Silicon Gate CMOS Multiport DRAM
w www.DataSheet4U.com w .D w t a S a e h U 4 t e .c m o .2SC5242 - NPN Epitaxial Silicon Transistor
2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High.2SC5242 - NPN Transistor
isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to.KSC5242 - NPN Epitaxial Silicon Transistor
KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V (Min.) High Power Dissi.KSC5242 - NPN Epitaxial Silicon Transistor
KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V (Min.) High Power Dissi.2SC5242 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5242 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Comple.2STC5242 - High power NPN epitaxial planar bipolar transistor
2STC5242 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO = 230 V Complementary .