CJ3400 Datasheet | Specifications & PDF Download

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor V(B

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CJ3400 Feature  30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.  Super High dense cell des

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor FEATU

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MOSFET CJ3400-HF (N-Channel ) Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free Features - N-Channel Enhancement mode field ef

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CJ3400A SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely

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