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www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP

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LASER DIODE NX5521 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well (MQW) struc

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SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is

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DATA SHEET NEC's L, S-BAND SPDT SWITCH UPG168TB FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V

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PHOTOCOUPLER PS9552,PS9552L1,PS9552L2,PS9552L3 2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE PHOTOCOUPLER 8-PIN DIP PHOTOCOUPLER NEPOC Series DES

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www.DataSheet4U.com Solid State Relay OCMOS FET PS7241-1A 4-PIN SOP 400 V BREAK DOWN VOLTAGE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7241-1A

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NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PAC

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NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES

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ZIC2410 Datasheet APPLICATIONS „ Home Automation and Security „ Automatic Meter Reading „ Factory Automation and Motor Control „ Medical Patient Monit

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RECEIVER NR3315TA Series InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR3315TA Series consists of InG

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Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100

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PHOTOCOUPLER PS9151 HIGH NOISE REDUCTION, 15 Mbps CMOS OUTPUT TYPE −NEPOC 5-PIN SOP (SO-5) PHOTOCOUPLER Series− DESCRIPTION The PS9151 is an optical

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RF Applications Engineering Technical Note μPC8236T6N Three Circuit Configurations For GPS Application o Introduction o Circuit Description o Perf

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PG2422TK GaAs Integrated Circuit SPDT Switch for 0.05 GHz to 6.0 GHz DESCRIPTION Data Sheet R09DS0013EJ0100 Rev.1.00 Jan 20, 2011 The PG2422TK is

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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A Business Partner of Renesas Electronics Corporation. Preliminary NR4211TH RECEIVER (Limiting TIA, with DCA function) InAlAs APD RECEIVER WITH INTE

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PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATIO

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www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GH

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www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's Ø50 μm InGaAs PIN-PD ROSA WITH INTERNAL PRE-AMPLIFIER NR3510UR FOR 2.5 GB/s APPLICATIONS FEATURES •

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