California Eastern Labs Datasheet | Specifications & PDF Download

PHOTOCOUPLER PS9552,PS9552L1,PS9552L2,PS9552L3 2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE PHOTOCOUPLER 8-PIN DIP PHOTOCOUPLER NEPOC Series DES

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is

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A Business Partner of Renesas Electronics Corporation. NX6350GP Series FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION DESCRIPTION The NX6350GP serie

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DATA SHEET NEC's HIGH CMR, 10Mbps OPEN COLLECTOR OUTPUT TYPE PS9817-1,-2 8-PIN SSOP (SO-8) HIGH-SPEED OPTOCOUPLER DESCRIPTION NEC's PS9817-1 and PS98

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A Business Partner of Renesas Electronics Corporation. Preliminary PS9924 HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE, 8-PIN LSDIP PHOTOCOUPLER FOR

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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-

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www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP

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PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICAT

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LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum

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LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quant

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6314EH LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6514EH LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P

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PHOTOCOUPLER www.DataSheet4U.com PS2501-1,-2,-4, PS2501L-1,-2,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Serie

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LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW)

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LASER DIODE NX5521 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well (MQW) struc

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LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum

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A Business Partner of Renesas Electronics Corporation. Preliminary NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source Data Shee

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A Business Partner of Renesas Electronics Corporation. PS9123 HIGH CMR, 15 Mbps TOTEM POLE OUTPUT TYPE, 5-PIN SOP (SO-5) PHOTOCOUPLER R08DS0030EJ010

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NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF =

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