California Eastern Labs Datasheet | Specifications & PDF Download

www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP

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NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF =

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www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GH

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www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's Ø50 μm InGaAs PIN-PD ROSA WITH INTERNAL PRE-AMPLIFIER NR3510UR FOR 2.5 GB/s APPLICATIONS FEATURES •

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PHOTOCOUPLER PS9552,PS9552L1,PS9552L2,PS9552L3 2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE PHOTOCOUPLER 8-PIN DIP PHOTOCOUPLER NEPOC Series DES

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PHOTOCOUPLER PS9552,PS9552L1,PS9552L2,PS9552L3 2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE PHOTOCOUPLER 8-PIN DIP PHOTOCOUPLER NEPOC Series DES

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NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PAC

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PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICAT

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NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES

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Preliminary Data Sheet NR3316TM RECEIVER PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS R08DS0020EJ0100 Rev.1.00 Aug 17, 2010

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LASER DIODE NX5521 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well (MQW) struc

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LASER DIODE NX7335 Series 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION 1550nm OTDR APPLICATION DIODE MODUL

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PHOTOCOUPLER PS8302L,PS8302L2 1 Mbps, HIGH CMR, ANALOG OUTPUT TYPE, 8 mm CREEPAGE 6-PIN SDIP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8302L and

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PHOTOCOUPLER PS9313L,PS9313L2 1 Mbps, OPEN COLLECTOR OUTPUT TYPE, HIGH CMR, INTELLIGENT POWER MODULE DRIVE 8 mm CREEPAGE 6-PIN SDIP PHOTOCOUPLER −NEP

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super L

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SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6353EP Series LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LAS

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A Business Partner of Renesas Electronics Corporation. PS9123 HIGH CMR, 15 Mbps TOTEM POLE OUTPUT TYPE, 5-PIN SOP (SO-5) PHOTOCOUPLER R08DS0030EJ010

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