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PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICAT

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www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GH

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www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's Ø50 μm InGaAs PIN-PD ROSA WITH INTERNAL PRE-AMPLIFIER NR3510UR FOR 2.5 GB/s APPLICATIONS FEATURES •

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RECEIVER NR3315TA Series InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR3315TA Series consists of InG

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PHOTOCOUPLER PS9513,PS9513L1,PS9513L2,PS9513L3 1 Mbps, OPEN COLLECTOR OUTPUT, FOR GATE DRIVE INTERFACE INTELLIGENT POWER MODULE NEPOC 8 mm CREEPAGE 8

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NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PAC

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www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP

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NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES

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DATA SHEET NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER

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LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum

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A Business Partner of Renesas Electronics Corporation. Preliminary NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source Data Shee

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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-

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RECEIVER NR3314TU InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR3314TU products consist of InGaAs PI

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU

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NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF =

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PHOTOCOUPLER PS9552,PS9552L1,PS9552L2,PS9552L3 2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE PHOTOCOUPLER 8-PIN DIP PHOTOCOUPLER NEPOC Series DES

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PHOTO DIODE NR6800 Series  80  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6800 Series is an InGaAs avalanche photo dio

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SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK

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