D1409 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High D

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE=

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High D

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2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit:

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Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A DESCRIPTION ·High collector-emitter breakdown

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: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hF

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