D1918 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementar

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2SD1918 NPN 1.5A 160V Middle Power Transistor Parameter VCEO IC Value 160V 1.5A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR

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2SD1918 NPN 1.5A 160V Middle Power Transistor Parameter VCEO IC Value 160V 1.5A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP

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SMD Type Silicon NPN Epitaxial 2SD1918 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = 160V) Low

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