D234 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD234 DESCRIPTION ·With TO-220 package ·Complement

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD234 DESCRIPTION ·With TO-220 package ·Complement to type 2SB434 APPL

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2349 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·Hi

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2348 DESCRIPTION www.data·sWheietht4uT.cOom-3P(H)IS package ·Built-in

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Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification s Features q High foward current transfer ratio hFE. q Low colle

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50310-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEM

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2348 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Saturation Voltage ·Hi

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BD234 SILICON PNP TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transist

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SLD234VL Index-Guided High Power AlGaAs Laser Diode Description The SLD234VL is a high power index-guided AlGaAs laser diode. Features • High power •

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PLASTIC INFRARED LIGHT EMITTING DIODE QED233 PACKAGE DIMENSIONS 0.195 (4.95) QED234 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) M

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2340 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·DARLINGT

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isc Silicon NPN Power Transistor 2SD234 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Vol

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2349 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Saturation Voltage ·Hi

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BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively 1 TO-126 2.Collector 3.Base

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Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 (94L-268-A56) (96-175-C56) 276

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Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 s Features q q q q 0.4 0.8±0.1 0.4 High

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ISD2532/40/48/64 SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION -1- Publication Release Date: J

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR (PNP) FEATURES Power Dissipation

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Product Folder Order Now Technical Documents Tools & Software Support & Community SN65HVD233, SN65HVD234, SN65HVD235 SLLS557H – NOVEMBER 2002 – R

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·

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