www.DataSheet4U.com .
ISD2560 - VOICE RECORD/PLAYBACK DEVICE
ISD2560/75/90/120 SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 60-, 75-, 90-, AND 120-SECOND DURATION Publication Release Date: May 2.HYB25D256160CC - 256 Mbit Double Data Rate SDRAM
D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne.NAND256-M - (NANDxxx-M) NAND Flash Memories
NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features ■ .AOD256 - N-Channel MOSFET
AOD256 150V N-Channel MOSFET General Description The AOD256 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi.2SD2561 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 500.IS25LD256C - 256Kbit Single Operating Voltage Serial Flash Memory
256Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface IS25LD256C FEATURES • Single Power Supply Operation -.HYB25D256160CT - 256 Mbit Double Data Rate SDRAM
D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne.HYB25D256160CE - 256 Mbit Double Data Rate SDRAM
D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne.HYB25D256800CE - 256 Mbit Double Data Rate SDRAM
D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne.HYB25D256400CT - 256 Mbit Double Data Rate SDRAM
D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne.HYB25D256161CE-4 - 16M x 16 Double Data Rate Graphics DRAM
D a t a s h e et , R e v . 1 . 0 , F e b . 2 00 4 HYB25D256161CE-5 HYB25D256161CE-4 1 6 M x 1 6 D o u b l e D a t a R a t e G r a p h ic s D R A M D .HYB25D256800BT - 256MBit Double Data Rata SDRAM
HYB25D256[800/160]BT(L)-[5/5A] 256MBit Double Data Rata SDRAM Preliminary DDR400 Data Sheet Addendum Jan. 2003, V0.9 Features CAS Latency and Clock F.NAND256W4A - SLC NAND flash memories
NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 25.M53D256328A - LPDDR SDRAM
ESMT LPDDR SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data s.M53D2561616A - Mobile DDR SDRAM
ESMT Mobile DDR SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional d.M52D2561616A - Mobile Synchronous DRAM
ESMT Mobile SDRAM FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key progra.PI5PD2561 - Adjustable Current-Limited Power Switch
PI5PD2560/2561 |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||.HYS72D256520GR - 184 Pin Registered Double Data Rate SDRAM Modules
D a t a S he et , R e v . 1 . 0 2 , D e c . 2 00 3 H Y S 7 2 D 2 5 6 5 2 0 G R -7 - A 184 Pi n Regi stere d Doubl e Dat a Ra te SDRAM Modules Reg DIM.HYS72D256520GR-7-A - 184 Pin Registered Double Data Rate SDRAM Modules
D a t a S he et , R e v . 1 . 0 2 , D e c . 2 00 3 H Y S 7 2 D 2 5 6 5 2 0 G R -7 - A 184 Pi n Regi stere d Doubl e Dat a Ra te SDRAM Modules Reg DIM.MCM44D256B - 4MB R4000 Secondary Cache Fast Static RAM Module Set
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM44256B/D 4MB R4000 Secondary Cache Fast Static RAM Module Set Four MCM44256B module.