D256 Datasheet | Specifications & PDF Download

ESMT DDR II SDRAM (Preliminary) M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V

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ESMT DDR II SDRAM (Preliminary) M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V

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ESMT DDR II SDRAM M14D2561616A (2C) Operation Temperature Condition -40°C~95°C 4M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD =

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ESMT DDR II SDRAM M14D2561616A (2C) Operation Temperature Condition -40°C~95°C 4M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD =

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ESMT DDR II SDRAM (Preliminary) M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V

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ESMT DDR II SDRAM M14D2561616A (2C) Operation Temperature Condition -40°C~95°C 4M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD =

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ESMT DDR II SDRAM (Preliminary) M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V

(75 views)

ESMT DDR II SDRAM (Preliminary) M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V

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Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=

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AOD256 150V N-Channel MOSFET General Description The AOD256 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi

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www.DataSheet4U.com ® ISD2500 Series Single-Chip Voice Record/Playback Devices 32-*, 40-*, 48-*, 64-*, 60-, 75-, 90-, and 120-Second Durations FEATU

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ISD2560/75/90/120 SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 60-, 75-, 90-, AND 120-SECOND DURATION Publication Release Date: May 2

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NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 25

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www.DataSheet4U.com ® ISD2500 Series Single-Chip Voice Record/Playback Devices 32-*, 40-*, 48-*, 64-*, 60-, 75-, 90-, and 120-Second Durations FEATU

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NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features ■

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NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 25

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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NXP Semiconductors Data Sheet: Technical Data MKW2xDxxx Rev. 2, 05/2016 MKW2xD Data Sheet Supports MKW24D512V, MKW22D512V, MKW21D512V, and MKW21D256

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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