D2n Datasheet | Specifications & PDF Download

OSD2N65 http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche en

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Memory Module Specifications KVR667D2N5/1G 1GB 128M x 64-Bit DDR2-667 CL5 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 128M x 64-bit

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N05ZR2/D ™Designer's Data Sheet Medium Power Surface Mount Products TMOS Dual N-C

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MOSFET – Power, Single, N-Channel 60 V, 2.0 mW, 185 A NTMYS2D2N06CL Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize

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Memory Module Specifications KVR667D2N5/2G 2GB 256M x 64-Bit DDR2-667 CL5 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 64-bit

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Memory Module Specifications KVR800D2N5/2G 2GB 256M x 64-Bit DDR2-800 CL5 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 64-bit

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo

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2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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July 2008 PFU2N65 / PFD2N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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MOSFET – Power, Single N-Channel 40 V, 1.25 mW, 451 A NVMJST1D2N04C Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize

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MDD2N60 N-channel MOSFET 600V MDD2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω General Description These N-channel MOSFET are produced using advanced Magna

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Aug 2006 PFU2N60 / PFD2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Desi

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www.DataSheet4U.com DFD2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability

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www.DataSheet4U.com FGD2N40L 400V N-Channel Logic Level IGBT March 2006 FGD2N40L 400V N-Channel Logic Level IGBT Features „ VCE(SAT) = 1.6V @ IC =

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Memory Module Specifications KVR800D2N5/1G 1GB 128M x 64-Bit DDR2-800 CL5 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 128M x 64-bit

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Feb. 2012 PFU2N70G / PFD2N70G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitance

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www.i-t.su info@i-t.su тел: (495) 739-09-95, 739-09-96 Реле серии D2N Реле с двумя переключающими контактами (DPDT). Макс. ток переключения контакт

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MLD2N06CL/D ™ Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limit

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