D2n Datasheet | Specifications & PDF Download

OSD2N65 http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche en

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MOSFET – Power, Single, N-Channel 60 V, 2.0 mW, 185 A NTMYS2D2N06CL Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize

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Aug 2006 PFU2N60 / PFD2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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July 2008 PFU2N65 / PFD2N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo

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www.DataSheet4U.com DFD2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability

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MOSFET – Power, Single N-Channel 40 V, 1.25 mW, 451 A NVMJST1D2N04C Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Feb. 2012 PFU2N70G / PFD2N70G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitance

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MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enha

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FQD2N50B / FQU2N50B May 2000 QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MLD2N06CL/D ™ Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limit

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2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS

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FQD2N80 / FQU2N80 September 2000 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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MLD2N06CL Power MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK The MLD2N06CL is designed for applications that require a rugged power switching d

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Philips Semiconductors Product specification PowerMOS transistor PHD2N60 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transis

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Desi

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AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high vol

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