D45H1 Datasheet | Specifications & PDF Download

D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications

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D44H11, D45H11 High Power Bipolar Transistors Designed for various specific and general purpose application such as; output and driver stages of ampl

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Complementary Silicon Power Transistors D44H Series (NPN), D45H Series (PNP) These series of plastic, silicon NPN and PNP power transistors can be use

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D45H11 — PNP Power Amplifier D45H11 PNP Power Amplifier Features • Sourced from process 5Q • General-Purpose Switching Transistor • Low Corrector-Emi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by D44H/D Complementary Silicon Power Transistors . . . for general purpose power amplifi

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11E3 Spec. No. : C607E3 Issued Date : 2007.03.07 Revised Date : 2017.04.05 P

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D44H Series (NPN), D45H Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be us

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PNP POWER TRANSISTORS COMPLEMENTARY TO THE D44H SERIES D45H Series -30 - -80 VOLTS -10 AMP, 50 WATTS The General Electric D45H is a power transistor

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D44H10 ·Minimum Lot-to-Lot variations

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www.DataSheet4U.com D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C607FP Issued Date : 2008.04.07 Revised Date : 2013.10.29 Page No. :

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D44H11FP D45H11FP Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amp

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE(sat) • High BVCEO • Excellent current gain character

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isc Silicon PNP Power Transistors INCHANGE Semiconductor D45H11 DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by D44H/D Complementary Silicon Power Transistors . . . for general purpose power amplifi

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MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2

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www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat

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