D7N65 Datasheet | Specifications & PDF Download

7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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STD7N65M2 N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features TAB 3 1 DPAK Figure 1. In

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AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high volt

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA7N65H, TMC7N65H, TMD7N65H, TMU7N65H Wuxi Tongfang Microelectronics C

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FEATURES l    Fast switching l   100% avalanche tested l   Improved dv/dt capability TMA7N65HY, TMD7N65HY, TMP7N65HY, TMU7N65HY   Wuxi Unigroup Micro

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isc N-Channel MOSFET Transistor AOD7N65 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor whi

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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STD7N65M6 Datasheet N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Featu

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WFD7N65L Product Description Silicon N-Channel MOSFET Features � 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 21nC) � Fast Switch

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA7N65H, TMC7N65H, TMD7N65H, TMU7N65H Wuxi Tongfang Microelectronics C

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WFD7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant Gene

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WFD7N65LFC Product Description Silicon N-Channel MOSFET Features • 650V, 7A • RDS(ON) = 1.3Ω (Max.) @ VGS = 10V, ID = 3.5A • Fast switching • 100% av

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor whi

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