SFD7N65E Datasheet | HiSemicon

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - VDS(V)=650V, ID=7A - RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. SFD7N65E Package TO-252-2L Marking SFD7N65E Material Pb Free Packing Reel Http://.hi-semicon. Rev 1.1 Page 1 of 11 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings SFD7N65E Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25C ID TC = 100C Drain Current Pulsed (Note 1) Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 2) Operation Junction Temperature Range Storage Temperature...