SFD7N65E - 7A 650V N-CHANNEL MOSFET

HiSemicon

General Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Key Features

VDS(V)=650V, ID=7A.
RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω.

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SFD7N65E 7a 650v n-channel mosfet by HiSemicon - Datasheet Preview

Datasheet Details

Part number	SFD7N65E
Manufacturer	HiSemicon
File Size	1.24 MB
Description	7A 650V N-CHANNEL MOSFET
Datasheet	SFD7N65E Datasheet

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=650V, ID=7A ◆RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.