HiSemicon SFD7N65E
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.| Part No. | SFD7N65E |
|---|---|
| Datasheet | SFD7N65E Download |
| Manufacturer |  HiSemicon |
| Description | 7A 650V N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.FEATURES
●VDS(V)=650V, ID=7A●RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω
APPLICATIONS
●Power faction correction (PFC)●Switched mode power supplies (SMPS)
●Uninterruptible power supply (UPS)
●LED lighting power SFD7N65E ORDERING INFORMATION Part No. SFD7N65E Package TO-252-2L Marking SFD7N65E Material Pb Free Packing Reel Rev 1.1 Page 1 of 11 SFD7N65E
ABSOLUTE MAXIMUM RATINGS
(TJ=25C unless otherwise noted) Characteristics Symbol Ratings SFD7N65E Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current TC = 25C ID TC = 100C Drain Current Pulsed (Note 1) IDM Power Dissipation(TC=25C) -Derate above 25C PD Single Pulsed Avalanche Energy (Note 2) EAS Operation Junction Temperature Range TJ Storage Temperature Range Tstg Maximum lead temperature for soldering TL purposes,1/8" from case for 5 seconds 650 ±30 7.0 5.6 28 100...
