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SFD7N30TS - 7A 300V N-CHANNEL POWER MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.

Key Features

  • VDS(V)=300V, ID=7A.
  • RDS(on) TYP:520mΩ@VGS=10V ID=3.5A MAX:600mΩ.

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Datasheet Details

Part number SFD7N30TS
Manufacturer HiSemicon
File Size 975.95 KB
Description 7A 300V N-CHANNEL POWER MOSFET
Datasheet download datasheet SFD7N30TS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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7A, 300V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology. Features ◆VDS(V)=300V, ID=7A ◆RDS(on) TYP:520mΩ@VGS=10V ID=3.5A MAX:600mΩ Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power SFD7N30TS ORDERING INFORMATION Part No. Package SFD7N30TS TO-252-2L Http://www.hi-semicon.com Marking SFD7N30TS Material Pb free Packing Reel Rev 1.