SFD7N30TS Datasheet | HiSemicon

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology. Features - VDS(V)=300V, ID=7A - RDS(on) TYP:520mΩ@VGS=10V ID=3.5A MAX:600mΩ Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. Package TO-252-2L Http://.hi-semicon. Marking SFD7N30TS Material Pb free Packing Reel Rev 1.0 Page 1 of 8 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25C ID TC = 100C Drain Current Pulsed (Note 1) Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 2) Operation Junction Temperature...