SFD7N30TS Overview
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
SFD7N30TS Key Features
- VDS(V)=300V, ID=7A -RDS(on) TYP:520mΩ@VGS=10V ID=3.5A MAX:600mΩ
| Part number | SFD7N30TS |
|---|---|
| Datasheet | SFD7N30TS-HiSemicon.pdf |
| File Size | 975.95 KB |
| Manufacturer | HiSemicon |
| Description | 7A 300V N-CHANNEL POWER MOSFET |
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These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
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