DCY Datasheet | Specifications & PDF Download

Product Folder Order Now Technical Documents Tools & Software Support & Community LM317 SLVS044Y – SEPTEMBER 1997 – REVISED APRIL 2020 LM317 3-Te

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F DN338 (DMDN338P) SOT-23 (SOT-23 Field Effect Transistors) WWW.DCY-CHINA.NET P-Channel Enhancement-Mode MOS FETs P MOS ■MAXIMUM RATINGS Chara

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WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS

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Description DM3400DI 20V N-Channel Enhancement Mode MOSFET The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charg

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F DN338 (DMDN338P) SOT-23 (SOT-23 Field Effect Transistors) WWW.DCY-CHINA.NET P-Channel Enhancement-Mode MOS FETs P MOS ■MAXIMUM RATINGS Chara

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Description DT4955A -30V P+P-Channel Enhancement Mode MOSFET The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate char

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Description DM3400DI 20V N-Channel Enhancement Mode MOSFET The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charg

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2003. 2. 14 2003. 2. 14

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www.DataSheet4U.com VISHAY TDCG / R / Y10..m Vishay Semiconductors Clock Display Description Four digit Display, with 10 mm digit charactersize. D

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FDCY18S120 SiC Schottky Barrier Diode http://www.fujielectric.com/products/semiconductor/ FUJI Diode Features • Ultra Low IR • Low VF • Tj MAX = 175

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