DG-105 Datasheet | Specifications & PDF Download

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FD2105 FD2105 FD2105 ，、 N MOSFET IGBT ，+40V 。 FD2105 VCC （UVLO）， ，。 FD2105 ， HO、LO 。 FD2105 ， 。 40V  +40V  ：3V~21V  ：+1.2A/-1.8A  3.3V/5

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Elektronische Bauelemente MB105 ~ MB107 VOLTAGE 600 V ~ 1000 V 1.0 Amp Miniature SMD Glass Passivated Bridge Rectifiers RoHS compliant product A suf

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www.DataSheet4U.com KM23C8105D(G) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word

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Single Phase Glass Passivated Silicon Bridge Rectifier DB105G thru DB107G VRRM = 600 V - 1000 V IO = 1 A Features • Ideal for printed circuit board

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IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module desig

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Chip Silicon Rectifier FMEG101DG THRU FMEG105DG 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600V Features • Batch process des

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IRSM807-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM807-105MH is a 10A, 500V half-bridge module desig

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MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge C

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SEMICONDUCTOR TECHNICAL DATA DF005S ~ DF10S Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers Reverse Voltage 50 to 1000 Volts

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Photointerrupters(Reflective) K O D E N S H I DG-105 DIMENSIONS The DG°©105 carrying a unique hysteresis transistor (BAMBIT)developed by KODENSHI CO

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FEATURES Very Fast Charge/Discharge – High Power Density – Lower ESR – RoHS Compliant APPLICATIONS Battery Backup/Alternative – Pulse Power – Energ

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MCC Features • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # HDB101G THRU

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BRUS1 BRUS5 MINIBRIDGE 50 ns. ULTRA-FAST RECOVERY 4 to 6 AMPERES SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK CHASSIS PC BOARD MOUNTING nt ne BRUS1 3A P

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FDB101-FDB107 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A 6.3± 0.2 8.3± 0.3 8.8± 0.5 Features Rating to 1000V PRV Surge ov

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DB101 THRU DB107 Technical Data Data Sheet N1778, Rev. A DB101 THRU DB107 SINGLE PHASE 1.0AMP GLASS PASSIVATED BRIDGE RECTIFIER DB-M Features  Glas

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EBS101 thru EBS107 Glass Passivated Bridge Rectifier .200(5.1 ) .193(4.9 ) .138(3.5 ) .126(3.2 ) .161(4.1 ) .154(3.9 ) .028(0.7 ) .024(0.6 ) .216

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MCC
     omponents 21201 Itasca Street Chatsworth  # $ % # HDBS101G THRU HDBS107G Featu

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HDBL101G - HDBL107G Taiwan Semiconductor CREAT BY ART 1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers FEATURES - Glass passivated j

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LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time LM5105 May 26, 2011 100V Half Bridge Gate Driver with Programmable DeadTime Genera

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