DG1 Datasheet | Specifications & PDF Download

CSD18504Q5A www.ti.com SLPS366 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18504Q5A 1 FEATURES Ultra Low Qg and Qgd Low Th

(21 views)

IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

(19 views)

DG10N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG10N60N，， ，，，。 ，，。 DG10N60 is an N-channel enhancement mode MOSFET, which

(18 views)

IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

(18 views)

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features:

(16 views)

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG100, 3DG102 NPN Silicon High Frequency Low Power Transistor Featur

(16 views)

VISHAY CG1 / DG1 Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection system

(14 views)

Data Sheet Low Capacitance, Low Charge Injection, ±15 V/+12 V, 4:1 iCMOS Multiplexer ADG1204 FEATURES 1.5 pF off source capacitance <1 pC charge inj

(14 views)

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG12 NPN Silicon High Frequency Middle Power Transistor Features: 1

(13 views)

Data Sheet Low Capacitance, Low Charge Injection, ±15 V/+12 V, iCMOS, SPST in SOT-23 ADG1201 FEATURES 2.4 pF typical off switch source capacitance,

(12 views)

www.DataSheet4U.com Preliminary Technical Data FEATURES 2 pF off capacitance 1 pC charge injection 33 V supply range 150 Ω on resistance Fully specif

(12 views)

(11 views)

TP25DG Series DESCRIPTION： 25W 1.5KVDC Isolated Wide Input Voltage DC/DC Converters The rated output power of TP25DG converters is 25W, the outline d

(11 views)

Data Sheet 4.5 Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers ADG1606/ADG1607 FEATURES 4.5 Ω typical on resista

(11 views)

3DG101, 3DG110, 3DG111 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency

(11 views)

MC9S12DG128 Device User Guide Covers MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DT128, MC9S12DJ128, MC9S12DB128, MC9S12A128, SC515846, SC515847,

(10 views)

Freescale Semiconductor, Inc. Freescale Semiconductor, Inc MC68HC912DG128 Technical Data M68HC12 Microcontrollers MC68HC912DG128/D Rev. 3, 10/20

(10 views)

Data Sheet 4 Ω RON, Triple/Quad SPDT ±15 V/+12 V/±5 V iCMOS Switches ADG1433/ADG1434 FEATURES 4.7 Ω maximum on resistance at 25°C 0.5 Ω on-resistanc

(10 views)

FEATURES 33 V supply range Fully specified at +12 V, ±15 V 130 Ω on resistance No VL supply required 3 V logic-compatible inputs Rail-to-rail operatio

(10 views)

Freescale Semiconductor, Inc. DOCUMENT NUMBER 9S12DT128BDGV1/D MC9S12DT128B Device User Guide V01.09 Covers also Freescale Semiconductor, Inc MC

(10 views)