DIFFUSION Datasheet | Specifications & PDF Download

3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -

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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown vo

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LED Lamp GL3tt63 series GL3tt63 series s Outline Dimensions Protruded resin 0.8MAX Sunken resin 0.7MAX ø3.0 +0.1 -0.2 ø3mm(T-1), Cylinder Type(Flan

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Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type For low-freauency power amplification Complementary to 2SB1172 and 2SB11

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Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A 10.0±0.3 8.

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LED Lamp GL3tt8 series Relative luminous intensity(%) 0.25+0.5 -0.25 (Tie-bar cut) . GL3tt8 series U 4 t e e h S a t a D . w w w s Outline Dimens

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Chip LED Device LT1t73A series LT1t73A series s Outline Dimensions (Unit : mm) 2.75 1.45mm, 0.9mm Thickness, Compact Milky Diffusion Chip LED Devic

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Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmatiSolo2d0.enr0.±D0i.2p.55DisMcaionnttiennuaendc Power Transistor

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Power Transistors 2SD1258 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.0±0.3 1.5±0.1

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Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary

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Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A 1

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Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington For power amplification Unit: mm s Features q Extremely satisfactory linear

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LED Lamp GL3tt8 series Relative luminous intensity(%) 0.25+0.5 -0.25 (Tie-bar cut) . GL3tt8 series U 4 t e e h S a t a D . w w w s Outline Dimens

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NPN 3DD13005G8D ○R 3DD13005G8D NPN ， ， ， ， 、。 ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 4 75 V A W TO-220AB -1

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Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A 5.0±0.2 Unit: mm 4.0±0.2 q High collector

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2002.02.20 Page No. : 1/3 HBF4522D NPN TRIPLE DIFFUSI

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1A 400V Tjw150 10DDA40 Diffusion-type Silicon Rectifier Diode Axial Lead Type Construction , Diffusion-type Silicon Rectifier Diode Application

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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown vo

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Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±

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Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.0±0.

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