2SD2573 - Silicon NPN triple diffusion planar type Transistor
Power Transistors 2SD2573 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high current amplification, power amplification 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Ts
2SD2573 Features
* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package
* Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open)
