* 0.45
* 0.1 1.27 +0.2 0.45
* 0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO
* 92 EIAJ:SC
* 43A time: t = 380µsec s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter
2SD2575
Panasonic Semiconductor
34.56 KB
Silicon npn transistor.
Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 q Low collector to emitter satu.
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