2SD2575 - Silicon NPN Transistor
Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 q Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1 Measuring (Ta=25˚C) Ratings 15 10 10 9 5 750 150 55 ~ +150 Unit V V V A A mW ˚C ˚
2SD2575 Features
* 0.45
* 0.1 1.27 +0.2 0.45
* 0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO
* 92 EIAJ:SC
* 43A time: t = 380µsec s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter
