DX Semiconductor Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(M

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BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

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EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor T

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BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

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BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C r

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Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−32

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508DX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Typ

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MUN5116DW1, NSBA143TDXV6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series

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PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP

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NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transis

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW NPN Transistors with Monolithic Bias Resistor Network MUN5235DW1, NSBC123JDXV6, NSBC123JD

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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Res

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NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN

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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low s

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BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general pur

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BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general pur

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isc Silicon NPN Darlington Power Transistor BDX33D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain :

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