Dual-Cell Datasheet | Specifications & PDF Download

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1 IP2305 3 IP2305 ● ：4.2V，： IP2305 ， 4.05V~4.4V（step=50mV） 1A ， 2 ● ，： 。 3.5V~3.8V（step=50mV） IP2305 (TC)、（CC） ● 500mA，： 20mA~1A（step=20

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EMF20A02G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 20mΩ ID 6A UIS 100% Tes

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Data Sheet April 1999 W3030 3 V Dual-Mode IF Cellular Receiver Features n n n Low supply current Analog received signal strength indicator (RSSI) av

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Data Sheet April 1999 W3030 3 V Dual-Mode IF Cellular Receiver Features n n n Low supply current Analog received signal strength indicator (RSSI) av

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AWT6103M5 Cellular Dual Mode AMPS/TDMA Mode 3.5V/30 dBm Linear Power Amplifier Module Advanced Product Information Rev. 1 • • • • • • • • • • FEATUR

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EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 40V 40V RDSON

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 7.8mΩ ID ‐24A UIS, Rg 100% Tested

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2120CB ， / IC。 2120-CB 2 / 、、 。   MX2120CB  ： 32V  ： 2120-CB 4.28±0.025V 2.90±0.100V  1 0.20±0.02V  3 ( 1、 2 )   ,  0V  ： ：7

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DA9313 High Efficiency Dual Cell Switched Capacitor Divider General Description DA9313 is a high-voltage power converter with a maximum output curren

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AWT6130 Cellular Dual Mode AMPS/CDMA 3.5V www.DataSheet4U.com 29dBm Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • I

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w w w . D a t a S h e e t 4 U . c o m AWT6105 Cellular Dual Mode AMPS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.

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bq76PL102 www.ti.com

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DA9313 High Efficiency Dual Cell Switched Capacitor Divider General Description DA9313 is a high-voltage power converter with a maximum output curren

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EMP38K03HPC Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 30V 30V RDSO

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EMB09K03VP Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 30V 30V RDSON

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 14mΩ ID 9.5A Pb‐Free Lead Plating

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    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  17mΩ  ID  10A    UIS, Rg 

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