ESF Datasheet | Specifications & PDF Download

MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large are

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NEW PRODUCT NEW PRODUCT NEW PRODUCT FESF8AT THRU FESF8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts ITO-220AC Forward Curr

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LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1

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GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP

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Ultrafast Rectifier INCHANGE Semiconductor FESF16JT FEATURES ·Ultrafast recovery time ·Power pack ·Glass passivated pellet chip junction ·Low switch

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CLY32 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 1

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CLY35 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 1

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www.vishay.com FES16xT, FESF16xT, FESB16xT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC ITO-220AC FES16xT Series PIN 1 2 1

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www.vishay.com FES16xT, FESF16xT, FESB16xT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC ITO-220AC FES16xT Series PIN 1 2 1

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NEW PRODUCT NEW PRODUCT NEW PRODUCT FESF8AT THRU FESF8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts ITO-220AC Forward Curr

Rating: 1 ★ (4 votes)

NEW PRODUCT NEW PRODUCT NEW PRODUCT FESF8AT THRU FESF8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts ITO-220AC Forward Curr

Rating: 1 ★ (4 votes)

www.vishay.com FES16xT, FESF16xT, FESB16xT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC ITO-220AC FES16xT Series PIN 1 2 1

Rating: 1 ★ (4 votes)

www.vishay.com FES16xT, FESF16xT, FESB16xT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC ITO-220AC FES16xT Series PIN 1 2 1

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NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • H

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull

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GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER I

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST

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