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Elmos
520.47 - Dual-Bridge Sensor Signal Processor
Dual-Bridge Sensor Signal Processor with SENT Interface PRODUCT PREVIEW – May 18, 2018 520.47 Features and Benefits • Supply voltage: 4.75 V to 5.25.
Telmos
TMD74HC374 - (TMDx4HC37x) 3 State Octal D-Flip-Flops
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Telmos
TMD54HC374 - (TMDx4HC37x) 3 State Octal D-Flip-Flops
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Telmos
TMD74HCT374 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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Telmos
TMD74HCT373 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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Telmos
TMD54HCT374 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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Telmos
TMD54HCT373 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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Telmos
TMD74HC373 - (TMDx4HC37x) 3 State Octal D-Flip-Flops
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Telmos
TMD54HC373 - (TMDx4HC37x) 3 State Octal D-Flip-Flops
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Telmos
TMD74HC374ICE - (TMDx4HC37x) 3 State Octal D-Flip-Flops
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Telmos
TMD74HCT374ICE - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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ELMOS Semiconductor
E910.27A - External Adjustable High Efficiency PFM Step-Down Converter
www.DataSheet4U.com - Preliminary - E910.27A External Adjustable High Efficiency PFM Step-Down Converter Features • • • • • • • • • • • • • • Brie.
INCHANGE
IXTQ480P2 - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max) ·Fast Sw.
INCHANGE
IXTQ470P2 - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 145mΩ(Max) ·Fast Sw.
INCHANGE
IXTQ450P2 - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 330mΩ(Max) ·Fast Sw.
INCHANGE
IXTQ250N075T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc.
INCHANGE
IXTQ240N055T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max) ·Fast Swi.
INCHANGE
IXTQ220N055T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc.
INCHANGE
IXTQ200N075T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.
INCHANGE
IXTQ230N085T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.4mΩ(Max) ·Fast Swi.
