Etron Technology Inc. Datasheet | Specifications & PDF Download

EtronTech Etron Confidential EM658160 (Rev. 1.1 Jan./2002) 4M x 16 DDR Synchronous DRAM (SDRAM) Features Fast clock rate: 300/285/250/200/166/143/12

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EtronTech Features • Single power supply voltage of 2.3V to 3.6V • Power down features using CE1# and CE2 • Low power dissipation • Data retention sup

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EtronTech Features • Single power supply voltage of 2.3V to 3.6V • Power down features using CE1# and CE2 • Low power dissipation • Data retention sup

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EtronTech Features • Single power supply voltage of 2.3V to 3.6V • Power down features using CE# • Low power dissipation • Data retention supply volta

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EtronTech Features • Organized as 1M words by 16 bits • Fast Cycle Time : 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memory cell

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EtronTech Features • Single Power Supply Voltage, 2.3 ~ 3.6 V • Power Down Features Using CE1#, CE2, LB# and UB# • Low Power Dissipation • Data retent

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EtronTech Features • • • • • • Fast access time from clock: 5/5/5.5/6.5/7.5 ns Fast clock rate: 183/166/143/125/100 MHz Fully synchronous operation In

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EtronTech Features • • • • • • EM637327 1Mega x 32 SGRAM Preliminary (08/99) Pin Assignment (Top View) DQ29 VSSQ DQ30 DQ31 VSS NC NC NC NC NC NC NC

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EtronTech Etron Confidential EM6A9320 4M x 32 DDR SDRAM Preliminary (Rev 0.3 7/2002) Features • Fast clock rate: 350/333/300/285/250/200 MHz • Diffe

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EL7301 DATA SHEET 1.0 May 2002 Version: Date: Approval: Etron technology, Inc P.O. Box 19-54 No.6 Technology Road V. Science-based Industrial Park,

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EL7300 DATA SHEET 1.00 Sep 2001 Version: Date: Approval: Etron technology, Inc P.O. Box 19-54 No.6 Technology Road V. Science-based Industrial Park,

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