polyfet rf devices General Description Silicon VDM.
Mitsubishi
MF1012S-1 - SAW Filter
MF1012S-1 FOR GPS SYSTEM MF1012S-1 FEATURES MF1012S-1 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / REF 0 dB DESCRIPTI.
Siemens Semiconductor Group
BF1012 - Silicon N-Channel MOSFET Tetrode
BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized.
Ericsson
PTF10122 - 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enha.
TRACO POWER
TMF10124 - AC/DC Medical Power Supply
AC/DC Medical Power Supply TMF 10 Series, 10 Watt • Fully encapsulated power supplies in plasic casing for PCB mount • Certification according to I.
Siemens Semiconductor Group
BF1012S - Silicon N-Channel MOSFET Tetrode
BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized.
Polyfet RF Devices
F1012 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
Ericsson
PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancem.
Cree
CMF10120D - Silicon Carbide Power MOSFET
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on).
Maple Semiconductor
MSF10120V1 - Silicon Carbide Diode
MSF10120V1 MSF10120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High.
Ericsson
PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhanceme.
Tyco
MRF10120 - MICROWAVE POWER TRANSISTORS
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pul.
Motorola
MRF10120 - MICROWAVE POWER TRANSISTORS
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D Microwave Long Pulse Power Transistor Designed for 960 – 1215 M.
Adige
IF1012 - (IF1xxx) Induttanze Tipo Funghetto Vertical
www.DataSheet4U.com INDUTTANZE TIPO FUNGHETTO VERTICALI (RADIALI) PAG. 01 Øe 10.02.05 CODICE IF0305 IF0405 IF0507-02V IF0507-103V IF0507- V IF0707-.
MTRONPTI
SF1012 - SAW Filter
www.DataSheet4U.com Model SF1012 Frequency Response SC938CC3 Terminal Connection Maximum Ratings Item Maximum DC Voltage Maximum Input Power Operat.