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F1012 Datasheet, Features, Application

F1012 RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDM.

Cree
rating-1 8

CMF10120D - Silicon Carbide Power MOSFET

Polyfet RF Devices
rating-1 6

F1012 - RF POWER VDMOS TRANSISTOR

Ericsson
rating-1 6

PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Maple Semiconductor
rating-1 5

MSF10120V1 - Silicon Carbide Diode

Ericsson
rating-1 5

PTF10122 - 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor

TRACO POWER
rating-1 5

TMF10124 - AC/DC Medical Power Supply

Tyco
rating-1 4

MRF10120 - MICROWAVE POWER TRANSISTORS

Motorola
rating-1 4

MRF10120 - MICROWAVE POWER TRANSISTORS

Siemens Semiconductor Group
rating-1 3

BF1012S - Silicon N-Channel MOSFET Tetrode

Siemens Semiconductor Group
rating-1 3

BF1012W - Silicon N-Channel MOSFET Tetrode

Ericsson
rating-1 3

PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

MTRONPTI
rating-1 3

SF1012 - SAW Filter

Mitsubishi
rating-1 2

MF1012S-1 - SAW Filter

Siemens Semiconductor Group
rating-1 1

BF1012 - Silicon N-Channel MOSFET Tetrode

Adige
rating-1 1

IF1012 - (IF1xxx) Induttanze Tipo Funghetto Vertical

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