polyfet rf devices General Description Silicon VDM.
MF1018S-2 - SAW Filter
MF1018S-2 FOR DIGITAL MOBILE TELEPHONE, Tx MF1018S-2 FEATURES MF1018S-2 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R.MF1018S-1 - SAW Filter
MF1018S-1 FOR DIGITAL MOBILE TELEPHONE, Tx MF1018S-1 FEATURES MF1018S-1 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R.MF1018S-4 - SAW Filter
MF1018S-4 FOR DIGITAL MOBILE TELEPHONE, Rx MF1018S-4 FEATURES MF1018S-4 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R.MF1018V-4 - SAW Filter
MF1018V-4 FOR DIGITAL MOBILE TELEPHONE, Rx MF1018V-4 FEATURES MF1018V-4 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R.IRF1018ESLPbF - Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .MF1018S-3 - SAW Filter
MF1018S-3 FOR DIGITAL MOBILE TELEPHONE, Tx MF1018S-3 FEATURES MF1018S-3 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R.CYF1018V - 18/36/72-Mbit Programmable 2-Queue FIFOs
CYF1018V, CYF1036V CYF1072V 18/36/72-Mbit Programmable 2-Queue FIFOs 18/36/72-Mbit Programmable 2-Queue FIFOs Features ■ Functional Description The.R5F1018AALA - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.R5F1018DALA - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.IRF1018EPbF - Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .IRF1018ESPbF - Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .IRF1018E - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1018E, IIRF1018E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement.IRF1018ES - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF1018ES ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.F1018 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .FPF1018 - IntelliMAX 1V Rated Advanced Load Management
FPF1015/6/7/8 IntelliMAXTM 1V Rated Advanced Load Management Products June 2009 FPF1015/6/7/8 IntelliMAX Features 0.8 to 1.8V Input Voltage Range .R5F1018CALA - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.R5F1018EALA - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.