F1018 Datasheet | Specifications & PDF Download

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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MF1018S-1 FOR DIGITAL MOBILE TELEPHONE, Tx MF1018S-1 FEATURES MF1018S-1 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R

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MF1018S-2 FOR DIGITAL MOBILE TELEPHONE, Tx MF1018S-2 FEATURES MF1018S-2 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R

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MF1018S-4 FOR DIGITAL MOBILE TELEPHONE, Rx MF1018S-4 FEATURES MF1018S-4 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1018E， IIRF1018E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement

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MF1018V-4 FOR DIGITAL MOBILE TELEPHONE, Rx MF1018V-4 FEATURES MF1018V-4 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R

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MF1018S-3 FOR DIGITAL MOBILE TELEPHONE, Tx MF1018S-3 FEATURES MF1018S-3 TYPICAL CHARACTERISTICS Insertion Loss vs. Frequency CH1 S21 log MAG 1 dB / R

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Isc N-Channel MOSFET Transistor IRF1018ES ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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CYF1018V, CYF1036V CYF1072V 18/36/72-Mbit Programmable 2-Queue FIFOs 18/36/72-Mbit Programmable 2-Queue FIFOs Features ■ Functional Description The

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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FPF1015/6/7/8 IntelliMAXTM 1V Rated Advanced Load Management Products June 2009 FPF1015/6/7/8 IntelliMAX Features „ 0.8 to 1.8V Input Voltage Range

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Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an

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Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an

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Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an

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Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an

(11 views)