F1K Datasheet | Specifications & PDF Download

SMD LED Product Data Sheet LTST-S32F1KT-5A Spec No. :DS22-2004-210 Effective Date: 12/22/2021 Revision: E LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON

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NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device

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F1A THRU F1M Surface Mount Fast Recovery Rectifier RoHS COMPLIANT Features ● Low profile package ● Ideal for automated placement ● Glass passivated

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GF1A-GF1M GF1A - GF1M Features • • • • Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. 3.93 3.

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User’s Manual RH850/F1KH, RH850/F1KM 32 User’s Manual: Hardware Renesas microcontroller RH850 Family All information contained in these material

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STC micro STC8F family of Micro-controllers Reference Manual Date of update：2018/3/20 -1- 67& )6HULHV0DQXDO Contents 1 Overview

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ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhance

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User’s Manual RH850/F1KH, RH850/F1KM 32 User’s Manual: Hardware Renesas microcontroller RH850 Family All information contained in these material

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High Temperature ThickReFsilsmtorsChip Resistors HTC SerHTHTHTiehhhsiiigggiiiccchhhkkkTTTFFFeeeiimimmlllmmmpppeCeeCCrrrhhahaaiitpittpupuurRRrerReeeee

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General Purpose Rectifiers (Glass Passivated) GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M Features • Low Forward Voltage Drop • High Current Capability •

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ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhance

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devi

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Ordering number : ENA2197 LC87F1K64A CMOS IC 8-bit Microcontroller with USB-host Controller 64K-byte Flash ROM / 8K-byte RAM / 48-pin http://onsemi.

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devi

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RF1K49154 Data Sheet October 1999 File Number 4143.3 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is

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1.0A Sintered Glass Passivated Super Fast Rectifier EGF1A – EGF1K 1.0A Sintered Glass Passivated Super Fast Rectifier Features • Sintered glass pas

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GF1A - GF1M PRV : 50 - 1000 Volts Io : 1.0 Ampere GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 F

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Power MOSFET Data Sheets S E M I C O N D U C T O R RF1K49086 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET™ Enhancement Mode Power MOSFET Des

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RF1K49156 Data Sheet August 1999 File Number 4011.3 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET™ Power MOSFET This Single N-Channel

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S E M I C O N D U C T O R RF1K49157 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET™ Enhancement Mode Power MOSFET Description The RF1K49157 S

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