FGHL50T65SQ IGBT for PFC Applications 650 V, 50 A.
ON Semiconductor
7
FGHL50T65SQDT - IGBT
IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor’s new series of field st.
ON Semiconductor
3
AFGHL50T65SQ - IGBT
Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 .
ON Semiconductor
2
AFGHL50T65SQDC - Hybrid IGBT
Hybrid IGBT, 50 A, 650 V AFGHL50T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technol.
ON Semiconductor
2
AFGHL50T65SQD - IGBT
Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q10.
ON Semiconductor
2
FGHL50T65SQ - IGBT
FGHL50T65SQ IGBT for PFC Applications 650 V, 50 A, TO-247-3L Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient .