FLM5964-8F Datasheet | Specifications & PDF Download

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FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.)

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w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 39.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 43.0dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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FLM5964-18F FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46d

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FLM5964-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37%

(11 views)

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