FSP Datasheet | Specifications & PDF Download

E6D30065D E-Series Automotive 650 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

(41 views)

WAS175M12BM3, 5 WAS175M12BM3T 1200 V, 175 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(39 views)

CAB008A12GM3, CAB008A12GM3T 1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Tu

(39 views)

WAS530M12BM3, 5 WAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(36 views)

WAS350M12BM3, 5 WAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(35 views)

CAB008A12GM3, CAB008A12GM3T 1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Tu

(35 views)

CAS350M12BM3, 5 CAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

(35 views)

HAS310M17BM3, 5 HAS310M17BM3T 1700 V, 310 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Housin

(35 views)

WAS310M17BM3, 5 WAS310M17BM3T 1700 V, 310 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(34 views)

E6D20065A E-Series Automotive 650 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

(34 views)

CAS310M17BM3, 5 CAS310M17BM3T 1700 V, 310 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra

(33 views)

C3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-spee

(33 views)

D V+ G1 K1 Mid CAB530M12BM3, C CAB530M12BM3T 1200 V, 530 A All-Silicon Carbide, Half-Bridge Module Technical Features • Industry Standard 62 mm

(33 views)

E6D30065H E-Series Automotive 650 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

(33 views)

E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

(32 views)

C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

(32 views)

E6D30065G E-Series Automotive 650 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

(32 views)

CAB008M12GM3, CAB008M12GM3T 1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Tu

(32 views)

CAS530M12BM3, 5 CAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

(31 views)

E6D40065G E-Series Automotive 650 V, 40 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

(31 views)