SPARKLE POWER INT’L LTD. SPI FSP065-AAB 19V@3.4.
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GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.
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GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.
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C3M0065090J - Silicon Carbide Power MOSFET
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C3D04060A - 4A Silicon Carbide Schottky
C3D04060A 3rd Generation 600 V, 4 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier .
ON Semiconductor
FFSP0665A - Silicon Carbide Schottky Diode
FFSP0665A — Silicon Carbide Schottky Diode www.onsemi.com FFSP0665A Silicon Carbide Schottky Diode 650 V, 6 A Features • Max Junction Temperature 17.
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FFSP15120A - Silicon Carbide Schottky Diode
FFSP15120A — Silicon Carbide Schottky Diode FFSP15120A Silicon Carbide Schottky Diode 1200 V, 15 A Features • Max Junction Temperature 175 °C • Avala.
ON Semiconductor
FFSP08120A - Silicon Carbide Schottky Diode
FFSP08120A — Silicon Carbide Schottky Diode FFSP08120A Silicon Carbide Schottky Diode 1200 V, 8 A Features • Max Junction Temperature 175 °C • Avalan.
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C6D08065A - 8A Silicon Carbide Schottky Diode
C6D08065A 6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky .
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C6D04065A - 4A Silicon Carbide Schottky Diode
C6D04065A 6th Generation 650 V, 4 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky .
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C3M0021120K - Silicon Carbide Power MOSFET
C3M0021120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optim.
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GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra.
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C3M0025065K - Silicon Carbide Power MOSFET
C3M0025065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High blo.
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C3M0060065L - Silicon Carbide Power MOSFET
C3M0060065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technology .
ON Semiconductor
FFSP2065B - Silicon Carbide Schottky Diode
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L FFSP2065B Silicon Carbide (SiC) Schottky Diodes use a completely new tech.
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C3D03065E - 3A Silicon Carbide Schottky Diode
C3D03065E 650 V, 3 A Silicon Carbide Schottky Diode Features • 650-Volt Schottky rectifier • Zero reverse recovery current • Zero forward recovery vol.
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C6D08065E - 8A Silicon Carbide Schottky Diode
C6D08065E 650 V, 8 A Silicon Carbide Schottky Diode Features • New 6th generation technology • Low forward voltage drop (VF) • Zero reverse recovery c.
ON Semiconductor
FFSP1265A - SiC Schottky Diode
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, TO-220-2L FFSP1265A Description Silicon Carbide (SiC) Schottky Diodes use a complete.
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C2D05120E - 5A Silicon Carbide Schottky Diode
C2D05120E 1200 V, 5 A Silicon Carbide Schottky Diode Features • 1.2 kV Schottky rectifier • Zero reverse recovery current • Zero forward recovery volt.
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C3M0032120J1 - Silicon Carbide Power MOSFET
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C4D05120A - 5A Silicon Carbide Schottky Diode
C4D05120A 4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba.