G-100_Electro Datasheet | Specifications & PDF Download

TDA7294 Datasheet 100 V, 100 W DMOS audio amplifier with mute/st-by MULTIPOWER BCD TECHNOLOGY Multiwatt15V Multiwatt15H Maturity status link TDA72

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® TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±45V) DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD

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•1T11m1 .·UNIVERSAL MICROELECTRONICS CO., LTD. AD14SLA SERIES: 14-PIN 5-TAP SURFACE MOUNTING, L LEAD FEATURES: •Compatible with TTL Circuits e5 Equall

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Silan Microelectronics SVG108R5NAM(T)_Datasheet 94A, 100V N-CHANNEL MOSFET DESCRIPTION SVG108R5NAM(T) is an N-channel enhancement mode power MOS fi

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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LV20100FCT Rev.E Mar.-2016 / Descriptions TO-220F  。 Schottky Diode in a TO-220F Plastic Package. DATA SHEET / Features ，，。 Low forward voltage

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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RTL8211F-CG RTL8211FD-CG RTL8211FI-CG RTL8211FDI-CG INTEGRATED 10/100/1000M ETHERNET PRECISION TRANSCEIVER DATASHEET (CONFIDENTIAL: Development Partne

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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Aluminum Electrolytic Capacitors Surface Mount Type S series Features ● Endurance : 85 ℃ 2000 h ● Vibration-proof product (30G guaranteed) is avail

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Aluminum Electrolytic Capacitors Surface Mount Type S series Features ● Endurance : 85 ℃ 2000 h ● Vibration-proof product (30G guaranteed) is avail

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Aluminum Electrolytic Capacitors Surface Mount Type S series Features ● Endurance : 85 ℃ 2000 h ● Vibration-proof product (30G guaranteed) is avail

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Products / Radial Lead Type Functional Polymer Aluminum Solid Electrolytic Capacitors NU series zFeatures By using Functional Polymer cathode, Frequ

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Z ibo Seno Electronic Engineering Co., Ltd. SB520 – SB5200 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc

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GS-R1005 50W STEP-DOWN SWITCHING REGULATOR Type GS-R1005 Vi 12 to 36 V Vo 5V Io 10 A FEATURES Wide input voltage range (12 to 36V) High efficiency (8

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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www.DataSheet4U.com PolySwitch™ Resettable Device Short Form Catalog MAY 2005 www.circuitprotection.com www.DataSheet4U.com For over 20 years, Ray

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www.DataSheet4U.com LY3100ALH MEMS motion sensor: high performance ±1000 dps analog yaw-rate gyroscope Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.7 V to 3.6 V

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RTL8211F-CG RTL8211FD-CG RTL8211FI-CG RTL8211FDI-CG INTEGRATED 10/100/1000M ETHERNET PRECISION TRANSCEIVER DATASHEET (CONFIDENTIAL: Development Partne

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