G200 Datasheet | Specifications & PDF Download

IDWD80G200C5 CoolSiC™ Schottky diode 2000 V G5 Final datasheet CoolSiC™ Schottky diode 2000 V G5 Features • VRRM = 2000 V • IF = 80 A • VF = 1.5 V • N

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Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode F

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Global Mixed-mode Technology G2002/G2002B 5+1CH serial input motor driver IC for DSC Features „ Build-in one micro-steps drive mode is possible fro

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GOFORD G2003A Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in

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Global Mixed-mode Technology G2002/G2002B 5+1CH serial input motor driver IC for DSC Features „ Build-in one micro-steps drive mode is possible fro

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IDYH10G200C5 CoolSiC™ Schottky diode 2000 V G5 Final datasheet CoolSiC™ Schottky diode 2000 V G5 Features • VRRM = 2000 V • IF = 10 A • VF = 1.5 V •

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PMEG2005AEA-Q 20 V, 0.5 A very low VF Schottky barrier rectifier 11 May 2022 Product data sheet 1. General description Schottky barrier rectifier

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Global Mixed-mode Technology Inc. G2008 4+2 CH serial input motor driver IC for DSC Features Built in 4+1 full-swing drivers switched by serial con

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Global Mixed-mode Technology Inc. G2006 Low-saturation, Low-voltage 1 channels Bi-directional Motor Driver Features „ Low voltage operation (VDD m

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FMG1G200US60L FMG1G200US60L Molding Type Module IGBT General Description Fairchild IGBT Power Module provides low conduction and switching losses a

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Global Mixed-mode Technology Inc. G2007 6CH serial input motor driver IC for DSC Features „ Built-in 5 full-swing/constant voltage drivers switched

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Global Mixed-mode Technology Inc. G2004 Constant current type 1-CH H-bridge driver IC Features „ Low voltage operation (VDD min=2.5V) „ Low saturat

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NOT RECOMMENDED FOR NEW DESIGN UG2001 - UG2007 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features • Glass Passivated Die Construction • Ultra-Fast

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IDYH50G200C5 CoolSiC™ Schottky diode 2000 V G5 Final datasheet CoolSiC™ Schottky diode 2000 V G5 Features • VRRM = 2000 V • IF = 50 A • VF = 1.5 V •

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G2002A N-Channel Enhancement Mode Power MOSFET Description The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge

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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High inp

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S E M I C O N D U C T O R DG200, DG201 CMOS Dual/Quad SPST Analog Switches Description The DG200 and DG201 solid state analog gates are designed usin

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