G2006 Datasheet | Specifications & PDF Download

Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode F

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NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vco

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Global Mixed-mode Technology Inc. G2006 Low-saturation, Low-voltage 1 channels Bi-directional Motor Driver Features „ Low voltage operation (VDD m

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TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positiv

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NOT RECOMMENDED FOR NEW DESIGN UG2001 - UG2007 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features • Glass Passivated Die Construction • Ultra-Fast

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LITE-ON SEMICONDUCTOR ULTRA FAST GLASS PASSIVATED RECTIFIERS UG2001 thru UG2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FEA

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