Global Mixed-mode Technology Inc. G2006 Low-satu.
RG2006LN - Low VF / High-Speed Switching Diode
Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode F.UG2006 - 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER
NOT RECOMMENDED FOR NEW DESIGN UG2001 - UG2007 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features • Glass Passivated Die Construction • Ultra-Fast .UPG2006TB - NECs 1.8 V L/ S-BAND SPDT SWITCH
NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vco.G2006 - Low-voltage 1 channels Bi-directional Motor Driver
Global Mixed-mode Technology Inc. G2006 Low-saturation, Low-voltage 1 channels Bi-directional Motor Driver Features Low voltage operation (VDD m.TG2006F - 1.9 GHz Band Power Amplifier
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positiv.UG2006 - ULTRA FAST GLASS PASSIVATED RECTIFIERS
LITE-ON SEMICONDUCTOR ULTRA FAST GLASS PASSIVATED RECTIFIERS UG2001 thru UG2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FEA.