G30/SMG30 Voltage-Controlled Attenuator Module 10.
Infineon
G30T60 - IGW30N60T
IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junctio.
KEDA
KDG30N120H2 - IGBT
KDG30N120H2 IGBT Features 1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms.
Toshiba
MG30G1BL3 - (MG30Gxxxx) Transistor
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
Infineon
G30N60HS - High Speed IGBT
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • D.
Huajing Microelectronics
3DG3020A1-HK - Silicon NPN bipolar transistor
NPN 3DG3020 A1-HK ○R 3DG3020 A1-HK NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.5 0.
Infineon
G30H603 - IGBT
IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGP30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerContr.
EGmicro
EG3012 - Half-Bridge Driver
ELECTRONIC GIANT EG3012 Datasheet Half-Bridge Driver Copyright © 2012 by EGmicro Corporation REV 1.0 micro corp. EG3012 datasheet Half-Bridge Dri.
Toshiba
MG30G2CL3 - Silicon NPN Triple Transistor
: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES . The Collecto.
EGmicro
EG3001 - Single-channel power MOSFET driver
ELECTRONIC GIANT EG3001 MOSFET 2011 © REV 1.0 EG3001 V1.0 MOSFET V1.0 2011 04 28 EG3001 2011 © www.EGmicro.com 2 / 11 1. 2. .
EGmicro
EG3013 - Half-Bridge Driver
ELECTRONIC GIANT EG3013 Datasheet Half-Bridge Driver Copyright © 2012 by EGmicro Corporation REV 1.0 micro corp. EG3013 datasheet Half-Bridge Dri.
ABOV
MC95FG308 - 8-BIT MICROCONTROLLERS
CMOS single-chip 8-bit MCU with EEPROM and 12-bit A/D converter Main features 8-bit Microcontroller with high speed 8051 CPU Basic MCU Function – .
Vishay
VLMPG30E1F2-GS18 - Low Current SMD LED PLCC-2
www.vishay.com VLMPG30.., VLMYG30.. Vishay Semiconductors Low Current SMD LED PLCC-2 19225 DESCRIPTION This device has been designed to meet the in.
Shindengen Electric
SG30TC12M - Schottky Barrier Diode
SG30TC12M Schottky Barrier Diodes 120V, 30A Feature ・High Recovery Speed ・Tj=175℃ ・Ultra low IR ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Na.
ETC
MG300H1FL1 - NPN
Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt.
ETC
MG300M1FK1 - NPN
Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt.
Fairchild Semiconductor
RURG3060_F085 - Ultrafast Rectifier
RURG3060_F085 30A, 600V Ultrafast Rectifier RURG3060_F085 30A, 600V Ultrafast Rectifier October 2013 Features • High Speed Switching ( trr=60ns(Typ.
GOFORD
G3035 - N-Channel MOSFET
GOFORD G3035L Description The G3035L uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch .
CML
CMX90G302 - Positive Gain-Slope Amplifier
CMX90G302 1.4 – 7.1GHz Positive Gain-Slope Amplifier +2dB Description The CMX90G302 is a low-power 50 Ω cascadable MMIC gain block suitable for a wid.
CML
CMX90G301 - Positive Gain-Slope Amplifier
CMX90G301 1.4 – 7.1GHz Positive Gain-Slope Amplifier +1dB Description The CMX90G301 is a low-power 50 Ω cascadable MMIC gain block suitable for a wid.
SHINDENGEN
SG30SC4M - Schottky Barrier Diode
SG30SC4M Schottky Barrier Diodes 40V, 30A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FTO-220G Pac.
