G3R-I Datasheet | Specifications & PDF Download

G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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10-Watt Lednium SMD (120° Viewing Angle) OVTL09LG3x Series www.datasheet4u.com • • • • • Revolutionary 3-dimensional packaged LED source Robust ener

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G3R160MT12J 1200 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature C

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This is the PDF file of catalog No.C02E-6 CHIP MONOLITHIC CERAMIC CAPACITOR High-power Type GRM600 Series C02E6.pdf 00.7.18 s Features 1. Mobile Tel

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Aluminum Electrolytic Capacitors/ NHG Radial Lead Type Series: NHG Type: A ■ Features ● Endurance : 105 °C 1000 h to 2000 h ● RoHS directive comp

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SG3R08B090 THRU SG3R08B600 Gas Discharge Tube DESCRIPTION The SG3R08B Series GDT offers high surge ratings in a miniature package.Low insertion loss

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G3R/G3RD Solid State Relays Same Shape as SSR Type G2R Power Relay for PCB Mounting • Direct mounting to PCBs. Also standardized with input indicator.

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G3R20MT17K 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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Power Inductors / Wire Wound type GSeries: Type: ELL4FG-A ELL4GG ELL4LG-A Choke Coils Type ELL4FG–A Type ELL4GG Type ELL4LG–A ■ Features ● Magnetic

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G3R/G3RD Solid State Relays Same Shape as SSR Type G2R Power Relay for PCB Mounting • Direct mounting to PCBs. Also standardized with input indicator.

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SG3R08B090 THRU SG3R08B600 Gas Discharge Tube DESCRIPTION The SG3R08B Series GDT offers high surge ratings in a miniature package.Low insertion loss

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March 2018 Preliminary MM20G3R135B 1350V 20A RC- IGBT RoHS Compliant PRODUCT FEATURES □ 1350V Reverse conducting IGBT with monolithic body diode □

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G3R75MT12D 1200 V 75 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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G3R450MT17D 1700 V 450 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(O

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G3R40MT12-CAL 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v

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Solid State Relay G3R-I/O Compact SSRs for I/O Interface with High Dielectric Strength Requirements • High-speed models with optimum input ratings fo

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G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology - +15 V / -5 V Gate Drive • Superior Q

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G3R45MT17-CAL 1700 V 45 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(

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G3R40MT12J 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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G3R40MT12K 1200V 34mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coeff

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