G3R-I Datasheet | Specifications & PDF Download

G3R45MT17-CAL 1700 V 45 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(

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G3R30MT12K 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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G3R30MT12-CAL 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v

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G3R30MT12J 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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G3R350MT12J 1200 V 350 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature C

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G3R160MT17D 1700 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(O

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G3R40MT12-CAL 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v

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Aluminum Electrolytic Capacitors/ NHG Radial Lead Type Series: NHG Type: A ■ Features ● Endurance : 105 °C 1000 h to 2000 h ● RoHS directive comp

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G3R20MT17-CAL 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(

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G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology - +15 V / -5 V Gate Drive • Superior Q

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G3R45MT17K 1700 V 45 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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G3R450MT17J 1700 V 450 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(O

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G3R40MT12K 1200V 34mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coeff

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G3R75MT12K 1200 V 75 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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Aluminum Electrolytic Capacitors/ NHG Radial Lead Type Series: NHG Type: A ■ Features ● Endurance : 105 °C 1000 h to 2000 h ● RoHS directive comp

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Solid State Relay G3R-I/O Compact SSRs for I/O Interface with High Dielectric Strength Requirements • High-speed models with optimum input ratings fo

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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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G3R160MT17J 1700 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(O

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G3R40MT12D 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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G3R75MT12-CAL 1200 V 75 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v

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