G4J Datasheet | Specifications & PDF Download

TP70H300G4JSGB 700V SuperGaN® GaN FET in PQFN (source tab) Datasheet Description The TP70H300G4JSGB 700V, 240mΩ Gallium Nitride (GaN) FET is a norma

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Specifications in this document are tentative and subject to change Datasheet TP65H150BG4JSG 650V SuperGaN® GaN FET in PQFN (source tab) Description

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Specifications in this document are tentative and subject to change Datasheet TP65H480G4JSGB 650V SuperGaN® GaN FET in PQFN (source tab) Description

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Specifications in this document are tentative and subject to change Datasheet TP65H300G4JSGB 650V SuperGaN® GaN FET in PQFN (source tab) Description

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SAMSUNG CONFIDENTIAL Rev. 1.0, Jul. 2015 KLMxGxJENB-B041 Samsung eMMC Product family eMMC 5.1 Specification compatibility datasheet SAMSUNG ELECTRONIC

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SAMSUNG CONFIDENTIAL Rev. 1.21 Jul. 2017 KLM8G1GETF-B041 KLMAG1JETD-B041 KLMBG2JETD-B041 KLMCG4JETD-B041 Samsung eMMC Product family eMMC 5.1 Specific

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VISHAY Standard Sinterglass Diode G4A to G4J Vishay Semiconductors \ Features • High temperature metallurgically bonded constructed rectifiers • Cav

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RG4J SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE：600V CURRENT: 3.0A FEATURE G-4 Glass passivated Hermetically sealed package Low r

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VISHAY Fast Sinterglass Diode RG4A / B / D / G / J Vishay Semiconductors Features • High temperature metallurgically bonded construction • Cavity-fr

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www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD UG4J EMITTER COMMON (DUAL DIGITAL TRANSISTORS) „ FEATURES 3 2 1 NPN EPITAXIAL SILICON TRANSISTOR

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RG4A THRU RG4J GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes FEATURES D Case Style G4 0.1

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