TP65H150BG4JSG 650V GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H150BG4JSG 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H150BG4JSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

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Datasheet Specifications

Part number: TP65H150BG4JSG
Manufacturer: Renesas ↗
File Size: 826.98 KB
Datasheet: TP65H150BG4JSG-Renesas.pdf
Description: 650V GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) min 650 VDSS(TR) (V) max 800 RDS(on) (mΩ) max
* 180 Qoss (nC) typ 35 QG (nC) typ 8.8
* Dynamic R ; DS(on) see Figures 18 and 19 TP65H150BG4JSG.3v3 Nov 07, 2023 Page 1 © 2024 Renesa

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TP65H150BG4JSG 650V GaN FET Renesas

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