TP65H150BG4JSG

650V GaN FET

Renesas

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Transphorm Inc	TP65H150BG4JSG-TR	GANFET N-CH 650V 13A QFN5X6	DigiKey	2547	1000 units	$1.85	🛒 Buy Now

TP65H150BG4JSG Datasheet (826.98 KB)

TP65H150BG4JSG Datasheet Preview — Preview of TP65H150BG4JSG PDF Datasheet

Datasheet Details

Part number:

TP65H150BG4JSG

Manufacturer:

Renesas ↗

File Size:

826.98 KB

Description:

650v gan fet

TP65H150BG4JSG Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H150BG4JSG General Description

The TP65H150BG4JSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and .

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TP65H150BG4JSG 650V GaN FET Renesas

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TP65H150BG4JSG Distributor

Transphorm Inc

TP65H150BG4JSG-TR

GaN FETs GAN FET 650V 13A QFN5x6

Mouser Electronics

3932 In Stock

Qty : 1 units

Unit Price : $4.81

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