Datasheet4U.com

TP65H150BG4JSG - 650V GaN FET

Renesas

📥 Download Datasheet

TP65H150BG4JSG Datasheet Preview — Preview of TP65H150BG4JSG PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TP65H150BG4JSG
Manufacturer	Renesas ↗
File Size	826.98 KB
Description	650V GaN FET
Datasheet	TP65H150BG4JSG-Renesas.pdf

TP65H150BG4JSG Product details

Description

The TP65H150BG4JSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

📁 TP65H150BG4JSG Similar Datasheet

TP65H150LSG - 650V GaN FET (Transphorm)
TP65H035G4QS - 650V FET (Transphorm)
TP65H035G4WS - SuperGaN FET (Transphorm)
TP65H035WS - 650V Cascode GaN FET (Transphorm)
TP65H035WSQA - 650V GaN FET (Transphorm)
TP65H050BS - GaN FET (Transphorm)
TP65H050WS - 650V GaN FET (Transphorm)
TP65H070L - 650V GaN FET (Transphorm)

Other Datasheets by Renesas

TP65H150G4LSG - 650V GaN FET
TP65H150G4LSGB - 650V GaN FET
TP65H150G4PS - 650V GaN FET
TP65H100G4LSGB - 650V SuperGaN GaN FET
TP65H100G4PS - 650V SuperGaN GaN FET
TP65H030G4PQS - 650V GaN FET

Published: Feb 7, 2025 |