Datasheet Details
- Part number
- TP65H050BS
- Manufacturer
- Transphorm
- File Size
- 1.69 MB
- Datasheet
- TP65H050BS-Transphorm.pdf
- Description
- GaN FET
TP65H050BS Description
TP65H050BS 650V GaN FET in TO-263 (source tab) Preliminary Datasheet .
The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device.
TP65H050BS Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Ha
TP65H050BS Applications
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 800 60
QRR (nC) typ
125
QG (nC) typ
16
* Dynamic on-resistance; see Figures 14 and 15
Cascode Schematic Symbol
August 18, 2018 tp65h050bs.0
Cas
📁 Related Datasheet
📌 All Tags
TP65H050BS Stock/Price