TP65H050BS Datasheet - Transphorm

TP65H050BS GaN FET

The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower ga.

TP65H050BS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Ha

TP65H050BS-Transphorm.pdf

TP65H050BS Datasheet Preview — Preview of TP65H050BS PDF

Datasheet Details

Part number:

TP65H050BS

Manufacturer:

Transphorm

File Size:

1.69 MB

Description:

Gan fet.

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TAGS

TP65H050BS TP65H050BS GaN FET Transphorm

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