TP65H070LDG, TP65H070L Datasheet - Transphorm

TP65H070LDG 650V GaN FET

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gat.

TP65H070LDG Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Ha

TP65H070L-Transphorm.pdf

TP65H070LDG Datasheet Preview — This datasheet PDF includes multiple part numbers: TP65H070LDG, TP65H070L. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

TP65H070LDG, TP65H070L

Manufacturer:

Transphorm

File Size:

1.04 MB

Description:

650v gan fet.

Note:

This datasheet PDF includes multiple part numbers: TP65H070LDG, TP65H070L.
Please refer to the document for exact specifications by model.

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TAGS

TP65H070LDG TP65H070L 650V GaN FET Transphorm

TP65H070LDG Distributor