TP65H070LDG - 650V GaN FET
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gat
TP65H070LDG Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Ha
