Description
TP65H070L Series 650V GaN FET PQFN Series Preliminary .
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.
Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Ha
Applications
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 800 85
QRR (nC) typ
90
QG (nC) typ
10
* Dynamic on-resistance; see Figures 5 and 6
Cascode Schematic Symbol
February 17, 2019 tp65h070l.0
Casco