Datasheet4U Logo Datasheet4U.com

TP65H070LDG, TP65H070L Datasheet - Transphorm

TP65H070LDG - 650V GaN FET

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gat

TP65H070LDG Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Ha

TP65H070L-Transphorm.pdf

This datasheet PDF includes multiple part numbers: TP65H070LDG, TP65H070L. Please refer to the document for exact specifications by model.
TP65H070LDG Datasheet Preview Page 2 TP65H070LDG Datasheet Preview Page 3

Datasheet Details

Part number:

TP65H070LDG, TP65H070L

Manufacturer:

Transphorm

File Size:

1.04 MB

Description:

650v gan fet.

Note:

This datasheet PDF includes multiple part numbers: TP65H070LDG, TP65H070L.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags