TP65H070G4LSGB - 650V SuperGaN GaN FET
The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi and patented design
TP65H070G4LSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
