TP65H070G4LSGB 650V SuperGaN GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H070G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number: TP65H070G4LSGB
Manufacturer: Renesas ↗
File Size: 835.33 KB
Datasheet: TP65H070G4LSGB-Renesas.pdf
Description: 650V SuperGaN GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor
* Consumer
* Computing Key Specifications VDSS (V) VDSS(TR) (V) RDS(on)eff (mΩ) max
* 650 800 85 Qoss (nC) typ 78 QG (nC) typ 8.4
* Dynamic on-resistance; see Figures 18 and 19 TP

TP65H070G4LSGB Distributors

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TP65H070G4LSGB 650V SuperGaN GaN FET Renesas

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