TP65H070G4LSGB Datasheet, Fet, Renesas

TP65H070G4LSGB Features

• Fet
• Gen IV technology
• JEDEC-qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
    – Wide gate safet

PDF File Details

Part number:

TP65H070G4LSGB

Manufacturer:

Renesas ↗

File Size:

835.33kb

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📄 Datasheet

Description:

650v supergan gan fet. The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT

TP65H070G4LSGB Application

• Applications
• Datacom
• Broad industrial
• PV inverter
• Servo motor
• Consumer
• Computing Key Sp

TAGS

TP65H070G4LSGB

Renesas

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