Datasheet Details
- Part number
- TP65H070G4LSGB
- Manufacturer
- Renesas ↗
- File Size
- 835.33 KB
- Datasheet
- TP65H070G4LSGB-Renesas.pdf
- Description
- 650V SuperGaN GaN FET
TP65H070G4LSGB Description
Specifications in this document are tentative and subject to change Datasheet TP65H070G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.
TP65H070G4LSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
TP65H070G4LSGB Applications
* Datacom
* Broad industrial
* PV inverter
* Servo motor
* Consumer
* Computing
Key Specifications
VDSS (V) VDSS(TR) (V) RDS(on)eff (mΩ) max
* 650 800 85
Qoss (nC) typ
78
QG (nC) typ
8.4
* Dynamic on-resistance; see Figures 18 and 19
TP
📁 Related Datasheet
📌 All Tags
TP65H070G4LSGB Stock/Price