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TP65H070G4LSGB Datasheet - Renesas

TP65H070G4LSGB 650V SuperGaN GaN FET

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design .

TP65H070G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H070G4LSGB-Renesas.pdf

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Datasheet Details

Part number:

TP65H070G4LSGB

Manufacturer:

Renesas ↗

File Size:

835.33 KB

Description:

650v supergan gan fet.

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TP65H070G4LSGB TP65H070G4LSGB 650V SuperGaN GaN FET Renesas

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