TP65H070G4LSGB

650V SuperGaN GaN FET

Renesas

TP65H070G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H070G4LSGB General Description

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies

*offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design .

TP65H070G4LSGB Datasheet (835.33 KB)