Datasheet Details
- Part number
- TP65H035G4QS
- Manufacturer
- Transphorm
- File Size
- 1.12 MB
- Datasheet
- TP65H035G4QS-Transphorm.pdf
- Description
- 650V FET
TP65H035G4QS Description
TP65H035G4QS 650V SuperGaN® FET in TOLL (source tab) Preliminary Datasheet .
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform.
TP65H035G4QS Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover lo
TP65H035G4QS Applications
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 800 41
QRR (nC) typ
150
QG (nC) typ
22
* Dynamic on-resistance; ; see Figures 19 and 20
Cascode Schematic Symbol
Apr. 22, 2021 t
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