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TP65H035G4QS Datasheet - Transphorm

TP65H035G4QS 650V FET

The TP65H035G4QS 650V, 35 mĪ© gallium nitride (GaN) FET is a normally-off device using Transphormā€™s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaNā„¢ platform uses advanced epi an.

TP65H035G4QS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover lo

TP65H035G4QS Datasheet (1.12 MB)

Preview of TP65H035G4QS PDF
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Datasheet Details

Part number:

TP65H035G4QS

Manufacturer:

Transphorm

File Size:

1.12 MB

Description:

650v fet.

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TP65H050G4BS 650V SuperGaN FET (Renesas)

Stock and price

Distributor
Essentra Components
PGSC-2128A
1 In Stock
Qty : 25 units
Unit Price : $14.88

TAGS

TP65H035G4QS 650V FET Transphorm

TP65H035G4QS Distributor