Datasheet Details
Part number:
TP65H035G4QS
Manufacturer:
Transphorm
File Size:
1.12 MB
Description:
650v fet.
Datasheet Details
Part number:
TP65H035G4QS
Manufacturer:
Transphorm
File Size:
1.12 MB
Description:
650v fet.
TP65H035G4QS, 650V FET
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform.
It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN™ platform uses advanced epi an
TP65H035G4QS Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover lo
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