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TP65H035WS 650V Cascode GaN FET

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Description

TP65H035WS 650V GaN FET in TO-247 (source tab) .
The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number
TP65H035WS
Manufacturer
Transphorm
File Size
1.18 MB
Datasheet
TP65H035WS-Transphorm.pdf
Description
650V Cascode GaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-vol

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