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TP65H050G4BS

650V SuperGaN FET

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor Transphorm Inc TP65H050G4BS 650 V 34 A GAN FET DigiKey 554 500 units
$7.39

TP65H050G4BS Datasheet (1.19 MB)

Preview of TP65H050G4BS PDF Datasheet

Datasheet Details

Part number:

TP65H050G4BS

Manufacturer:

Renesas ↗

File Size:

1.19 MB

Description:

650v supergan fet

TP65H050G4BS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover loss Benefits

* Enable

TP65H050G4BS General Description

The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and .

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TAGS

TP65H050G4BS 650V SuperGaN FET Renesas

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TP65H050G4BS Distributor

Distributor
Transphorm Inc
TP65H050G4BS
GaN FETs 650V, 50mOhm
Mouser Electronics
473 In Stock
Qty : 1 units
Unit Price : $13.38