Datasheet Details
- Part number
- TP65H050G4BS
- Manufacturer
- Renesas ↗
- File Size
- 1.19 MB
- Datasheet
- TP65H050G4BS-Renesas.pdf
- Description
- 650V SuperGaN FET
TP65H050G4BS Description
Specifications in this document are tentative and subject to change Datasheet TP65H050G4BS 650V SuperGaN® FET in TO-263 (source tab) .
The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
TP65H050G4BS Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss
Benefits
* Enable
TP65H050G4BS Applications
* ▪ Datacom ▪ Broad industrial ▪ PV inverter ▪ Servo motor
Cascode Schematic Symbol Cascode Device Structure
Key Specifications
VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max
* 650 800 60
QRR (nC) typ
120
QG (nC) typ
16
* Dynamic on-resistance; see Figures 18 and 19
TP65H050G4BS.1v3 May 17,
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